EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIESKATNANI AD; MARGARITONDO G.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2522-2525; BIBL. 32 REF.Article

ELECTRONIC STATES OF CDIN₂SE₄ AND ZNIN₂SE₄: ROLE OF THE CATION PSEUDOVACANCIESMARGARITONDO G; KATNANI AD; LEVY F et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. 725-731; ABS. GER; BIBL. 12 REF.Article

CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATIONBRILLSON LJ; BRUCKER CF; KATNANI AD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 784-786; BIBL. 12 REF.Article

ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF HETEROJUNCTIONSKATNANI AD; MARGARITONDO G; ALLEN RE et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 8; PP. 1231-1234; BIBL. 20 REF.Article

COMPOSITION DEPENDENCE OF THE VALENCE-BAND STATES IN III-VI AND IV-VI SOLID SOLUTIONSMARGARITONDO G; LEVY F; STOFFEL NG et al.1980; PHYS. REV. B; USA; DA. 1980; VOL. 21; NO 12; PP. 5768-5774; BIBL. 19 REF.Article

PAIRED-ANION LIGAND EFFECTS IN THE VALENCE BAND OF ZRS₃ AND ZRSE₃MARGARITONDO G; KATNANI AD; STOFFEL NG et al.1980; J. ELECTRON SPECTROSC. RELAT. PHENOMENA; NLD; DA. 1980; VOL. 20; NO 1-2; PP. 69-74; BIBL. 13 REF.Article

ATOMIC-INTERLAYER-CONTROLLED DIFFUSION AT SEMICONDUCTOR-SEMICONDUCTOR INTERFACESMARGARITONDO G; STOFFEL NG; KATNANI AD et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 917-918; BIBL. 8 REF.Article

SOFT X-RAY PHOTOEMISSION STUDY OF ANNEALED AL-OVERLAYERS ON GAAS(110) = ETUDE PAR PHOTOEMISSION DE RAYONS X MOUS DE SURCOUCHES DE AL RECUITES SUR GAAS(110)KHAN A; BRILLSON LJ; KATNANI AD et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 12; PP. 1269-1272; BIBL. 11 REF.Article

WAVEFUNCTION SYMMETRIES AND BINDING ENERGIES IN GAS_XSE_1-X COMPOUNDSMARGARITONDO G; KATNANI AD; STOFFEL NG et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 6; PP. 641-644; BIBL. 12 REF.Article

NATURE OF THE BAND DISCONTINUITIES AT SEMICONDUCTOR HETEROJUNCTION INTERFACESMARGARITONDO G; KATNANI AD; STOFFEL NG et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 3; PP. 163-166; BIBL. 19 REF.Article

MODIFICATION OF THE GERMANIUM OXIDATION PROCESS BY ALUMINUM ADATOMSKATNANI AD; PERFETTI P; TE XIU ZHAO et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 619-621; BIBL. 13 REF.Article

ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACESBRILLSON LJ; BRUCKER CF; STOFFEL NG et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 13; PP. 838-841; BIBL. 12 REF.Article

MICROSCOPIC INVESTIGATION OF THE BAND DISCONTINUITIES AT THE SILICON-GERMANIUM HETEROJUNCTION INTERFACEMARGARITONDO G; STOFFEL NG; KATNANI AD et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 3; PP. 215-217; BIBL. 21 REF.Article

PHOTON-ENERGY DEPENDENCE OF THE CORE-LEVEL PEAK INTENSITY IN PHOTOELECTRON SPECTRA: A STUDY OF THE EXTENDED FINE STRUCTUREMARGARITONDO G; KATNANI AD; STOFFEL NG et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 6; PP. 2777-2784; BIBL. 31 REF.Article

INITIAL ADSORPTION STATE FOR AI ON GA AS (110) AND ITS ROLE IN THE SCHOTTKY BARRIER FORMATIONDANIELS RR; KATNANI AD; TE XIU ZHAO et al.1982; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 12; PP. 895-898; BIBL. 18 REF.Article

ATOMIC GEOMETRY OF GAAS (110)-P(1 X 1)-ALDUKE CB; PATON A; MEYER RJ et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 6; PP. 440-443; BIBL. 17 REF.Article

DENSITY-OF-STATES CHANGES NEAR THE FERMI LEVEL AND THE LATTICE INSTABILITY IN TISE₂MARGARITONDO G; BERTONI CM; WEAVER JH et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 3765-3769; BIBL. 27 REF.Article

EVIDENCE FOR SEMICONDUCTOR-SEMICONDUCTOR INTERFACE STATES: SI(111) (2 X 1)-GEPERFETTI P; STOFFEL NG; KATNANI AD et al.1981; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 6174-6177; BIBL. 14 REF.Article